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SPICE MODEL: BC847PN
Pb
Lead-free
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * *
Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability
C1
SOT-363
A
B2 E2
Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 0.90 0.25 0.10 8
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25
B C D F H
M
Mechanical Data
* * * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 3): K7P Ordering Information: See Page 2 Weight: 0.006 grams (approximate) @ TA = 25C unless otherwise specified
J D F K
E1 B1 C2
0.65 Nominal
G H
J K L M
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current
NPN BC847B Section
Value 50 45 6.0 100 200 200 Unit V V V mA mA mA VCBO VCEO VEBO IC ICM IEM
Characteristic
Symbol
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current
@ TA = 25C unless otherwise specified
PNP BC857B Section
Symbol VCBO VCEO VEBO IC ICM IEM Value -50 -45 -5.0 -100 -200 -200 Unit V V V mA mA mA
Characteristic
Thermal Characteristics
Characteristic Power Dissipation (Note 1) @ TA = 25C Total Device Thermal Resistance, Junction to Ambient (Note 1) @ TA = 25C Operating and Storage Temperature Range Symbol Pd RJA Tj, TSTG Value 200 625 -65 to +150 Unit mW C/W C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30278 Rev. 8 - 2
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BC847PN
(c) Diodes Incorporated
Electrical Characteristics
Characteristic
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO ICBO fT CCBO NF Min 50 45 6 200 -- -- 580 -- -- -- 100 -- -- Typ -- -- -- 290 90 200 700 900 660 -- -- -- 300 3.5 2.0
NPN BC847B Section
Max -- -- -- 450 250 600 -- 700 720 15 5.0 -- 6.0 10 Unit V V V -- mV mV mV nA A MHz pF dB Test Condition IC = 10A, IB = 0 IC = 10mA, IB = 0 IE = 1A, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200A, RG = 2.0k, f = 1.0kHz, f = 200Hz
Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure
Electrical Characteristics
Characteristic
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) VBE(SAT) VBE(ON) ICBO ICBO fT CCBO NF Min -50 -45 -5 220 -- -- -600 -- -- -- 100 -- -- Typ -- -- -- 290 -75 -250 -700 -850 -650 -- -- -- 200 3 --
PNP BC857B Section
Max -- -- -- 475 -300 -650 -- -950 -750 -820 -15 -4.0 -- 4.5 10 Unit V V V -- mV mV mV nA A MHz pF dB Test Condition IC = 10A, IB = 0 IC = 10mA, IB = 0 IE = 1A, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = 150C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200A, RG = 2.0k, f = 1.0kHz, f = 200Hz
Collector-Base Breakdown Voltage (Note 3) Collector-Emitter Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) DC Current Gain (Note 3) Collector-Emitter Saturation Voltage (Note 3) Base-Emitter Saturation Voltage (Note 3) Base-Emitter Voltage (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure
Ordering Information
Device BC847PN-7-F
(Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel
Notes: 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30278 Rev. 8 - 2
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BC847PN
Marking Information
K7P
K7P = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code 2001 M Month Code 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 2006 T May 5 Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D
250
(see Note 1)
YM
1000
VCE = 5V TA = 100C
Pd, POWER DISSIPATION (mW)
200
hFE, DC CURRENT GAIN
TA = 25C
100
TA = -50C
150
100
10
50
0 0 40 80 120 160 200
1 0.01 0.1 1.0 10 100
TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve (Total Device)
0.5
IC / IB = 20
IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current (BC847B)
1000 fT, GAIN BANDWIDTH PRODUCT (MHz)
TA = 25C
VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.4
VCE = 10V
VCE = 5V VCE = 2V
0.3
100
0.2
TA = 100C
0.1
TA = 25C
0 0.1 1.0
TA = -50C
10
10 100
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current (BC847B)
IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current (BC847B)
DS30278 Rev. 8 - 2
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BC847PN
0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10
1000
TA = 150C
VCE = 5V
0.4
hFE, DC CURRENT GAIN
0.3
100
TA = 25C TA = -50C
0.2
TA = 25C TA = 150C
10
0.1 TA = -50C 0 0.1 1 10 100 1000
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, DC Current Gain vs. Collector Current (BC857B)
IC, COLLECTOR CURRENT (mA) Fig. 5, Collector Emitter Saturation Voltage vs. Collector Current (BC857B)
1000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V
100
10 1 10 100
IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B)
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30278 Rev. 8 - 2
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BC847PN

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